direct band gap中文是什么意思

• 直接带隙

• "direct"中文翻译    adj. 1.笔直的，一直线的；正面的。 2.直接的。 ...
• "band"中文翻译    n. 1.队，团，群；(盗贼等的)帮，伙。 2.(吹奏) ...
• "gap"中文翻译    n. 1.(墙壁、篱笆等的)裂口，裂缝；豁口，缺口。 【 ...
• "direct band-gap semiconductor" 中文翻译 :    直接跃迁半导体
• "band gap" 中文翻译 :    能带间隙; 能带隙; 能隙
• "band gap narrowing" 中文翻译 :    禁带收缩
• "band-gap energy" 中文翻译 :    带隙能
• "band-gap reference" 中文翻译 :    带隙基准
• "bg band gap" 中文翻译 :    能带隙，某材料的导带和价带之间的能量差
• "graded band gap" 中文翻译 :    缓变禁带
• "indirect band gap" 中文翻译 :    非竖直带隙
• "optical band gap" 中文翻译 :    光禁带
• "photonic band gap system" 中文翻译 :    就称为光能隙系统
• "direct gap semiconductor" 中文翻译 :    直接带隙半导体
• "direct-gap semiconductor" 中文翻译 :    直接带隙半导体; 直接跃迁半导体
• "electron energy band gap theory" 中文翻译 :    电子能带隙理论
• "direct axis air-gap performance" 中文翻译 :    直轴气隙磁导性
• "narrow band direct printing" 中文翻译 :    窄带印字报窄带直接印字电报; 窄频直接打印
• "narrow band direct-printing" 中文翻译 :    窄带直接印字
• "narrow band direct print {= nbdp" 中文翻译 :    狭频带直接印字
• "nbd narrow band direct printing" 中文翻译 :    窄带直接打印
• "a gap" 中文翻译 :    填补空白
• "gap" 中文翻译 :    n. 1.(墙壁、篱笆等的)裂口，裂缝；豁口，缺口。 【军事】突破口。 2.(意见的)龃龉，分歧；隔阂，距离，差距。 3.山峡，隘口。 4.间隙；【机械工程】火花隙；【航空】(双翼机的)翼隔。 5.(文章等中的)脱漏，中断；(知识等的)空白，缺陷。 a gap in historical records 史料的中断。 credibility gap 信用差距。 generation gap代沟〔不同代的人之间的思想隔阂〕。 gaps between teeth 齿缝。 the gap between imports and exports 进出口差额。 bridge [close, fill, stop, supply] a gap 填补空白，弥补缺陷。 stand in the gap 首当其冲，挺身阻挡。 vt. (-pp-) 使豁裂，使生罅隙。 vi. 豁开。
• "a band" 中文翻译 :    a波段; a带
• "a-band" 中文翻译 :    a波段; a带

• With a broaden and likely direct band gap , porous silicon has a different band structure to that of the bulk silicon . thus the porous silicon can emit at room temperature
  多孔硅改变了体硅的能带结构，使禁带展宽，并由间接带隙向直接带隙转变，实现了室温发光。
• With a broad and likely direct band gap , porous silicon has a different band structure from that of the bulk silicon . thus the porous silicon can emit visible light at room temperature
  多孔硅改变了本体硅的能带结构，使禁带宽度展宽，并由间接禁带向直接禁带转变，实现了室温发光。
• It is widely accepted that zno is one of the most promising materials for producing an ultraviolet laser at room temperature due to its wide direct band gap ( eg = 3 . 3ev ) and large excitonic binding energy of 60 mev , which was testified by the results of optically pumped stimulated emission and lasing from zno thin films
  氧化锌作为一种宽带隙半导体（ 3 . 3ev ） ，激子束缚能大（ 60mev ） ，在室温下容易获得强的激子发射，而且可能成为紫外激光的重要材料。因此，对氧化锌的研究已成为继gan之后宽带隙半导体研究的又一热点。
• C60 , a new type of semiconductor material , has many superior properties , such as wide forbidden band , direct band gap , rapid responding time , high optical damage threshold value and wide responding frequency band etc . these capabilities indicate that c60 film will be used widely in computer , integrate optical instrument and storage device etc . however , the preparation and the purification of c60 material affect the large - scale application at all times
  C _ ( 60 )薄膜作为新的半导体材料具备许多优越特性，如禁带宽度大、直接带隙、快速响应时间、高的光学损伤阀值、较宽的响应频带等，这些性能预示了c _ ( 60 )薄膜在计算机、集成光学器件、光存储器等方面具有广阔的应用前景，但c _ ( 60 )材料的制备与提纯还一直是阻碍该新材料投入大规模实际应用的主要因素。
• The results show that the differences between the two composites are very large . although the micrograph of the ni nano - wire and the co nano - wire are nearly the same , as the metal composition increased , the absorption band - edge of the ni / aao composite is small red - shifted ( 13 run ) , however , the absorption band - edge of the co / aao composite is strongly red - shifted ( 80 nm ) . meanwhile , the ni / aao and co / aao composite exhibit the optical features of the semiconductor with indirect and direct band gap respectively
  或no组份比的增加， ni / aao吸收边的红移量仅约13nln ，而co / aao的吸收边红移量却超过了80lun ，分析发现ni / aao复合体系具有间接带隙半导体的光学特征，而co从ao复合结构则具有直接带隙半导体的光学特征; 5 .实验研究了a创aao纳米有序阵列复合结构的光吸收特性，在其光吸收谱上出现了较强的ag表面等离子体振荡吸收峰，随ag沉积量的减少，吸收峰位发生红移，且逐渐展宽
• Due to its intrinsic merits , such as wide band gap , high electron saturated drift velocity , high melting point , good coefficient of thermal conductivity , anti - radiation and good chemical stability , gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature , high frequency and high power electronic devices
  Gan是直接带隙半导体材料，以其禁带宽度大、电子饱和漂移速度大、熔点高、热导率高、抗辐射能力强和化学稳定性好等优点成为制造短波长光发射器件及高温、高频、大功率电子器件的理想材料。

• direct band gap перевод